IXTA62N15P-TRL

Teknik Özellikler

Tab

Tab

Maximum Gate Source Voltage V

±20

Maximum Power Dissipation Mw

350000

Number Of Channels

1 Channel

Channel Mode

Enhancement

Id Continuous Drain Current

62 A

Vgs Gatesource Voltage

- 20 V, + 20 V

Configuration

Single

Package Length

10.41(Max)

Transistor Polarity

N-Channel

Vgs Th Gatesource Threshold Voltage

3 V

Typical Gate Charge Vgs Nc

70@10V

Minimum Operating Temperature

- 55 C

Pd Power Dissipation

350 W

Automotive

No

Package Width

9.65(Max)

Maximum Continuous Drain Current A

62

Typical Turnon Delay Time Ns

27

Supplier Package

D2PAK

Rds On Drainsource Resistance

40 mOhms

Number Of Elements Per Chip

1

Mounting

Surface Mount

Maximum Drain Source Voltage V

150

Typical Gate Charge10v Nc

70

Eccn Us

EAR99

Vds Drainsource Breakdown Voltage

150 V

Ambalaj

Tape and Reel

Qg Gate Charge

70 nC

Montaj Stili

SMD/SMT

Maximum Drain Source Resistance Mohm

40@10V

Typical Turnoff Delay Time Ns

76

Parça Durumu

Active

Kılıf / Paket

TO-263-3

Maks. Çalışma Sıcaklığı

+ 175 C

Minimum Operating Temperature C

-55

Pcb Changed

2

Typical Input Capacitance Vds Pf

2250@25V

Technology

Si

Typical Rise Time Ns

38

Ppap

No