IXTA08N100D2HV-TRL

Teknik Özellikler

Tab

Tab

Maximum Gate Source Voltage V

±20

Maximum Power Dissipation Mw

60000

Number Of Channels

1 Channel

Channel Mode

Enhancement

Vgs Gatesource Voltage

- 20 V, + 20 V

Id Continuous Drain Current

800 mA

Configuration

Single

Package Length

10.2(Max)

Transistor Polarity

N-Channel

Vgs Th Gatesource Threshold Voltage

4 V

Typical Gate Charge Vgs Nc

14.6@5V

Pd Power Dissipation

60 W

Hts

8541.29.00.95

Minimum Operating Temperature

- 55 C

Automotive

No

Package Width

9.4(Max)

Typical Turnon Delay Time Ns

28

Supplier Package

TO-263HV

Rds On Drainsource Resistance

21 Ohms

Number Of Elements Per Chip

1

Mounting

Surface Mount

Maximum Drain Source Voltage V

1000

Eccn Us

EAR99

Vds Drainsource Breakdown Voltage

1 kV

Ambalaj

Tape and Reel

Qg Gate Charge

14.6 nC

Montaj Stili

SMD/SMT

Maximum Drain Source Resistance Mohm

21000@0V

Typical Turnoff Delay Time Ns

34

Parça Durumu

Active

Kılıf / Paket

TO-263HV-3

Minimum Operating Temperature C

-55

Pcb Changed

2

Maks. Çalışma Sıcaklığı

+ 150 C

Typical Input Capacitance Vds Pf

325@25V

Technology

Si

Typical Rise Time Ns

57

Ppap

No

Eu Rohs

Compliant with Exemption