IXGX120N60B3

Teknik Özellikler

Tab

Tab

Collectoremitter Saturation Voltage

1.5V

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Mounting

Through Hole

Qualification Status

Not Qualified

Igbt Type

PT

Case Connection

COLLECTOR

Terminal Kaplaması

TIN SILVER COPPER

Vceon Max Vge Ic

1.8V @ 15V, 100A

Kurşunsuz Kodu

yes

Yayın Yılı

2009

Collector Emitter Voltage Vceo

1.8V

Turn On Time

123 ns

Maximum Collectoremitter Voltage V

600

Maximum Gate Emitter Voltage V

±20

Fabrika Tedarik Süresi

30 Weeks

Number Of Elements

1

Channel Type

N

Gateemitter Thr Voltagemax

5V

Automotive

No

Maximum Gate Emitter Leakage Current Ua

0.1

Çalışma Sıcaklığı

-55°C~150°C TJ

Configuration

Single

REACH Uyumluluk Kodu

unknown

JESD-609 Kodu

e1

Max Power Dissipation

780W

Terminal Sayısı

3

Gateemitter Voltagemax

20V

Td Onoff25c

40ns/227ns

Transistor Element Material

SILICON

Maximum Continuous Collector Current A

280

Transistor Application

POWER CONTROL

Current Collector Pulsed Icm

600A

Switching Energy

2.9mJ (on), 3.5mJ (off)

Package Length

16.13(Max)

Nem Hassasiyeti (MSL)

1 (Unlimited)

Maximum Power Dissipation Mw

780

Ppap

No

Package Height

21.34(Max)

Test Conditions

480V, 100A, 2 Ω, 15V