IXGR60N60C3D1

Teknik Özellikler

Switching Energy

800μJ (on), 450μJ (off)

Jesd30 Code

R-PSIP-T3

Transistor Application

POWER CONTROL

Current Collector Pulsed Icm

260A

Nem Hassasiyeti (MSL)

1 (Unlimited)

Maximum Power Dissipation Mw

170

Ppap

No

Package Length

16.13(Max)

Transistor Element Material

SILICON

Terminal Sayısı

3

Td Onoff25c

21ns/70ns

Gateemitter Voltagemax

20V

Maximum Continuous Collector Current A

75

Çalışma Sıcaklığı

-55°C~150°C TJ

Maximum Gate Emitter Leakage Current Ua

0.1

Automotive

No

Configuration

Single

REACH Uyumluluk Kodu

unknown

JESD-609 Kodu

e1

Max Power Dissipation

170W

Channel Type

N

Fabrika Tedarik Süresi

30 Weeks

Number Of Elements

1

Gateemitter Thr Voltagemax

5V

Collector Emitter Voltage Vceo

2.5V

Maximum Gate Emitter Voltage V

±20

Maximum Collectoremitter Voltage V

600

Turn On Time

54 ns

Terminal Kaplaması

TIN SILVER COPPER

Case Connection

ISOLATED

Kurşunsuz Kodu

yes

Vceon Max Vge Ic

2.5V @ 15V, 40A

Yayın Yılı

2010

Igbt Type

PT

Mounting

Through Hole

Tab

Tab

Reverse Recovery Time

25 ns

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Collectoremitter Saturation Voltage

2.5V

Qualification Status

Not Qualified