IXGR24N120C3D1

Teknik Özellikler

Maximum Collectoremitter Voltage V

1200

Maximum Gate Emitter Voltage V

±20

Turn On Time

54 ns

Collector Emitter Voltage Vceo Max

1.2 kV

Collector Emitter Voltage Vceo

4.2V

Yayın Yılı

2008

Vceon Max Vge Ic

4.2V @ 15V, 20A

Kurşunsuz Kodu

yes

Pd Power Dissipation

200 W

Case Connection

ISOLATED

Terminal Kaplaması

Tin/Silver/Copper (Sn/Ag/Cu)

Igbt Type

PT

Technology

Si

Maximum Gate Emitter Voltage

- 20 V, + 20 V

Qualification Status

Not Qualified

Mounting

Through Hole

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Reverse Recovery Time

220 ns

Collectoremitter Saturation Voltage

3.6 V

Tab

Tab

Ppap

No

Maximum Power Dissipation Mw

200

Nem Hassasiyeti (MSL)

1 (Unlimited)

Package Length

16.13(Max)

Switching Energy

1.37mJ (on), 470μJ (off)

Current Collector Pulsed Icm

96A

Transistor Application

POWER CONTROL

Maximum Continuous Collector Current A

48

Transistor Element Material

SILICON

Maks. Çalışma Sıcaklığı

+ 150 C

Td Onoff25c

16ns/93ns

Terminal Sayısı

3

Configuration

Single

JESD-609 Kodu

e1

Max Power Dissipation

200W

Çalışma Sıcaklığı

-55°C~150°C TJ

Maximum Gate Emitter Leakage Current Ua

0.1

Automotive

No

Channel Type

N

Number Of Elements

1