IXGN200N60B3

Teknik Özellikler

Weight

38.000013g

Montaj

Chassis Mount

Yayın Yılı

2009

Transistor Application

POWER CONTROL

Collector Current Dc

300(A)

Rad Hardened

No

Case Connection

ISOLATED

Input Capacitance

26nF

Typical Collector Emitter Saturation Voltage V

1.65

Fabrika Tedarik Süresi

30 Weeks

Çalışma Sıcaklığı

-55°C~150°C TJ

Vcesatmax

1.5 V

Nem Hassasiyeti (MSL)

1 (Unlimited)

Polaritychannel Type

N-CHANNEL

Maximum Gate Emitter Voltage V

±20

Eccn Us

EAR99

Collectoremitter Breakdown Voltage

600V

Configuration

Single Dual Emitter

Operating Temperature Max

150C

Igbt Type

PT

Operating Temperature Min

-55C

Pin Sayısı

4

Package Type

SOT-227B

Kurşunsuz

Lead Free

Maximum Continuous Collector Current A

300

Turn Off Delay Time

310 ns

Collectoremitter Saturation Voltage

1.35V

RoHS Durumu

ROHS3 Compliant

Vceon Max Vge Ic

1.5V @ 15V, 100A

Minimum Operating Temperature C

-55

Input

Standard

Power Dissipation

830W

Additional Feature

UL RECOGNIZED, LOW CONDUCTION LOSS

Hts

8541.29.00.95

Kurşunsuz Kodu

yes

Maximum Power Dissipation Mw

830

Number Of Elements

1

Terminal Formu

UNSPECIFIED

Max Power Dissipation

830W

Temel Parça No

IXG*200N60