Adet bazlı fiyat
- 1+ adet$3.77
- 10+ adet$3.56
- 100+ adet$3.36
- 500+ adet$3.17
Sevkiyat
Stoktan aynı gün hazırlık
Orijinal ürün
Doğrulanmış tedarik
RoHS
Compliant
Destek
Teknik ekip desteği
Teknik Özellikler
- Igbt Type
- PT
- Pin Sayısı
- 3
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Polaritychannel Type
- N-CHANNEL
- Ambalaj
- Tube
- Maximum Gate Emitter Voltage V
- ±20
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Configuration
- Single
- Collectoremitter Breakdown Voltage
- 600V
- Eccn Us
- EAR99
- Tab
- Tab
- Typical Collector Emitter Saturation Voltage V
- 1.8(Max)
- Fabrika Tedarik Süresi
- 30 Weeks
- Montaj
- Through Hole
- Test Conditions
- 480V, 30A, 5 Ω, 15V
- Weight
- 6.500007g
- Gateemitter Thr Voltagemax
- 5V
- Tepe Reflow Sıcaklığı (°C)
- NOT SPECIFIED
- Transistor Application
- POWER CONTROL
- Yayın Yılı
- 2008
- Case Connection
- COLLECTOR
- JESD-609 Kodu
- e1
- Kurşunsuz Kodu
- yes
- Hts
- 8541.29.00.95
- Number Of Elements
- 1
- Maximum Power Dissipation Mw
- 300
- Minimum Operating Temperature C
- -55
- Power Dissipation
- 300W
- Package Height
- 21.46(Max)
- Additional Feature
- LOW CONDUCTION LOSS
- Continuous Collector Current
- 48A
- Vceon Max Vge Ic
- 1.8V @ 15V, 32A
- RoHS Durumu
- ROHS3 Compliant
- Maximum Continuous Collector Current A
- 48
- Kurşunsuz
- Lead Free
- Svhc
- Yes
- Fall Timemax Tf
- 200ns
- Collectoremitter Saturation Voltage
- 1.8V
- Terminal Sayısı
- 3
- Turn Off Timenom Toff
- 347 ns
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