IXGF30N400

Teknik Özellikler

Nem Hassasiyeti (MSL)

1 (Unlimited)

Kurşunsuz Kodu

yes

Lead Shape

Through Hole

Fabrika Tedarik Süresi

8 Weeks

Kılıf / Paket

i4-Pac™-5 (3 Leads)

Maximum Gate Emitter Leakage Current Ua

0.2

Package Width

5.21(Max)

Giriş Tipi

Standard

Collectoremitter Breakdown Voltage

4kV

Maximum Continuous Collector Current A

30

RoHS Durumu

ROHS3 Compliant

Yayın Yılı

2009

Minimum Operating Temperature C

-55

Montaj

Through Hole

Terminal Kaplaması

Tin/Silver/Copper (Sn/Ag/Cu)

Number Of Elements

1

Case Connection

ISOLATED

Transistor Application

GENERAL PURPOSE SWITCHING

Terminal Sayısı

3

Gate Charge

135nC

Typical Collector Emitter Saturation Voltage V

5.2(Max)

Parça Durumu

NRND

Max Collector Current

30A

Pin Sayısı

3

Maximum Gate Emitter Voltage V

±20

Hts

8541.59.00.80

Gateemitter Voltagemax

20V

Power Max

160W

Mounting

Through Hole

Maximum Collectoremitter Voltage V

4000

Eccn Us

EAR99

Vceon Max Vge Ic

5.2V @ 15V, 90A

Montaj Tipi

Through Hole

JESD-609 Kodu

e1

Polaritychannel Type

N-CHANNEL

Maximum Power Dissipation Mw

160

Ambalaj

Tube

Transistor Element Material

SILICON

Maximum Operating Temperature C

150

Element Configuration

Single