IXFX50N50

Teknik Özellikler

Typical Rise Time Ns

60

Package Length

16.13(Max)

Mounting

Through Hole

Typical Turnon Delay Time Ns

45

Tab

Tab

Vds Drainsource Breakdown Voltage

500 V

Eu Rohs

Compliant with Exemption

Typical Fall Time Ns

45

Process Technology

HiperFET

Channel Type

N

Rds On Drainsource Resistance

100 mOhms

Number Of Channels

1 Channel

Supplier Package

PLUS 247

Category

Power MOSFET

Technology

Si

Typical Gate Charge10v Nc

330

Vgs Gatesource Voltage

- 20 V, + 20 V

Ppap

No

Typical Turnoff Delay Time Ns

120

Material

Si

Pin Sayısı

3

Automotive

No

Svhc Exceeds Threshold

Yes

Transistor Polarity

N-Channel

Parça Durumu

NRND

Svhc

Yes

Maximum Gate Source Voltage V

±20

Maximum Drain Source Resistance Mohm

100@10V

Typical Gate Charge Vgs Nc

330@10V

Channel Mode

Enhancement

Maximum Continuous Drain Current A

50

Minimum Operating Temperature

- 55 C

Pcb Changed

3

Configuration

Single

Minimum Operating Temperature C

-55

Maximum Drain Source Voltage V

500

Typical Input Capacitance Vds Pf

9400@25V

Maximum Power Dissipation Mw

520000

Number Of Elements Per Chip

1

Maks. Çalışma Sıcaklığı

+ 150 C