IXFX160N30T

Teknik Özellikler

Maximum Drain Source Voltage V

300

Maximum Power Dissipation Mw

1390000

Number Of Elements Per Chip

1

Typical Input Capacitance Vds Pf

28000@25V

Maximum Operating Temperature C

150

Package Height

21.34(Max)

Package Width

5.21(Max)

Maximum Drain Source Resistance Mohm

19@10V

Typical Gate Charge Vgs Nc

335@10V

Maximum Continuous Drain Current A

160

Channel Mode

Enhancement

Configuration

Single

Pcb Changed

3

Minimum Operating Temperature C

-55

Typical Gate Charge10v Nc

335

Ppap

No

Pin Sayısı

3

Typical Turnoff Delay Time Ns

105

Hts

8541.29.00.95

Automotive

No

Svhc Exceeds Threshold

Yes

Parça Durumu

Active

Svhc

Yes

Maximum Gate Source Voltage V

±20

Package Length

16.13(Max)

Typical Rise Time Ns

38

Mounting

Through Hole

Tab

Tab

Typical Turnon Delay Time Ns

37

Eu Rohs

Compliant with Exemption

Typical Fall Time Ns

25

Channel Type

N

Process Technology

GigaMOS

Supplier Package

PLUS 247

Category

Power MOSFET