IXFT94N30P3

Teknik Özellikler

Mounting

Surface Mount

Typical Turnon Delay Time Ns

23

Typical Fall Time Ns

11

Eccn Us

EAR99

Category

Power MOSFET

Technology

Si

Vgs Gatesource Voltage

- 20 V, + 20 V

Hts

8541.29.00.95

Pin Sayısı

3

Parça Durumu

Active

Svhc Exceeds Threshold

Yes

Transistor Polarity

N-Channel

Maximum Gate Source Voltage V

±20

Svhc

Yes

Minimum Operating Temperature

- 55 C

Maximum Continuous Drain Current A

94

Maximum Gate Threshold Voltage V

5

Minimum Operating Temperature C

-55

Maximum Drain Source Voltage V

300

Montaj Stili

SMD/SMT

Seri

IXFT94N30

Package Width

14(Max)

Kılıf / Paket

TO-268-3

Pd Power Dissipation

1.04 mW

Typical Rise Time Ns

19

Package Length

16.05(Max)

Tab

Tab

Vds Drainsource Breakdown Voltage

300 V

Eu Rohs

Compliant with Exemption

Channel Type

N

Process Technology

HiperFET

Rds On Drainsource Resistance

36 mOhms

Maximum Gate Source Leakage Current Na

100

Supplier Package

TO-268AA

Number Of Channels

1 Channel

Typical Gate Charge10v Nc

102

Ppap

No

Vgs Th Gatesource Threshold Voltage

3 V

Typical Turnoff Delay Time Ns

49

Qg Gate Charge

102 nC