IXFT120N30X3HV

Teknik Özellikler

Automotive

No

Power Dissipation

735W

Qg Gate Charge

170 nC

Typical Turnoff Delay Time Ns

130

Vgs Th Gatesource Threshold Voltage

4.5 V

Ppap

No

Typical Gate Charge10v Nc

170

Supplier Package

TO-268HV

Number Of Channels

1 Channel

Channel Type

N

Rds On Drainsource Resistance

11 mOhms

Vds Drainsource Breakdown Voltage

300 V

Eu Rohs

Compliant with Exemption

Tab

Tab

Package Length

16.05(Max)

Typical Rise Time Ns

30

Id Continuous Drain Current

120 A

Package Height

5.1(Max)

Maximum Operating Temperature C

150

Maks. Çalışma Sıcaklığı

+ 150 C

Typical Input Capacitance Vds Pf

10500@25V

Number Of Elements Per Chip

1

Maximum Power Dissipation Mw

735000

Pcb Changed

2

Configuration

Single

Channel Mode

Enhancement

Typical Gate Charge Vgs Nc

170@10V

Maximum Drain Source Resistance Mohm

11@10V

Svhc

Yes

Maximum Gate Source Voltage V

±20

Continuous Drain Current Id

120A

Transistor Polarity

N-Channel

Svhc Exceeds Threshold

Yes

Parça Durumu

Active

Hts

8541.29.00.95

Pin Sayısı

3

Vgs Gatesource Voltage

- 20 V, + 20 V

Eccn Us

EAR99

Category

Power MOSFET

Technology

Si