IXFR230N20T

Teknik Özellikler

Vds Drainsource Breakdown Voltage

200 V

Eu Rohs

Compliant with Exemption

Typical Fall Time Ns

29

Typical Turnon Delay Time Ns

41

Tab

Tab

Mounting

Through Hole

Typical Rise Time Ns

35

Package Length

16.13(Max)

Category

Power MOSFET

Eccn Us

EAR99

Technology

Si

Supplier Package

ISOPLUS 247

Number Of Channels

1 Channel

Process Technology

HiperFET

Channel Type

N

Rds On Drainsource Resistance

8 mOhms

Vgs Th Gatesource Threshold Voltage

3 V

Vgs Gatesource Voltage

- 20 V, + 20 V

Ppap

No

Typical Gate Charge10v Nc

378

Maximum Gate Source Voltage V

±20

Automotive

No

Transistor Polarity

N-Channel

Parça Durumu

Active

Typical Turnoff Delay Time Ns

104

Qg Gate Charge

358 nC

Material

Si

Pin Sayısı

3

Pcb Changed

3

Configuration

Single

Channel Mode

Enhancement

Maximum Continuous Drain Current A

156

Minimum Operating Temperature

- 55 C

Maximum Drain Source Resistance Mohm

8@10V

Typical Gate Charge Vgs Nc

378@10V

Minimum Operating Temperature C

-55

Maks. Çalışma Sıcaklığı

+ 175 C

Montaj Stili

Through Hole

Typical Input Capacitance Vds Pf

28000@25V

Maximum Power Dissipation Mw

600000