IXFR200N10P

Teknik Özellikler

Minimum Operating Temperature C

-55

Configuration

Single

Pcb Changed

3

Maximum Drain Source Resistance Mohm

9@10V

Typical Gate Charge Vgs Nc

235@10V

Maximum Continuous Drain Current A

133

Channel Mode

Enhancement

Maximum Operating Temperature C

175

Package Height

21.34(Max)

Package Width

5.21(Max)

Maximum Drain Source Voltage V

100

Number Of Elements Per Chip

1

Maximum Power Dissipation Mw

300000

Typical Input Capacitance Vds Pf

7600@25V

Supplier Package

ISOPLUS 247

Category

Power MOSFET

Process Technology

HiperFET

Channel Type

N

Tab

Tab

Typical Turnon Delay Time Ns

30

Eu Rohs

Compliant with Exemption

Typical Fall Time Ns

90

Package Length

16.13(Max)

Typical Rise Time Ns

35

Mounting

Through Hole

Automotive

No

Parça Durumu

Active

Maximum Gate Source Voltage V

±20

Material

Si

Pin Sayısı

3

Typical Turnoff Delay Time Ns

150

Typical Gate Charge10v Nc

235

Ppap

No