IXFQ50N60P3

Teknik Özellikler

Maximum Operating Temperature C

150

Package Width

4.9(Max)

Maximum Drain Source Voltage V

600

Typical Input Capacitance Vds Pf

6300@25V

Number Of Elements Per Chip

1

Maximum Power Dissipation Mw

1040000

Minimum Operating Temperature C

-55

Pcb Changed

3

Configuration

Single

Maximum Drain Source Resistance Mohm

160@10V

Typical Gate Charge Vgs Nc

94@10V

Channel Mode

Enhancement

Maximum Continuous Drain Current A

50

Automotive

No

Parça Durumu

Active

Maximum Gate Source Voltage V

±30

Typical Turnoff Delay Time Ns

62

Hts

8541.29.00.95

Pin Sayısı

3

Typical Gate Charge10v Nc

94

Ppap

No

Supplier Package

TO-3P

Category

Power MOSFET

Eccn Us

EAR99

Channel Type

N

Process Technology

Polar3 HiperFET

Typical Turnon Delay Time Ns

31

Tab

Tab

Eu Rohs

Compliant with Exemption

Typical Fall Time Ns

17

Typical Rise Time Ns

20

Package Length

15.8(Max)

Mounting

Through Hole