IXFP16N50P3

Teknik Özellikler

Maximum Gate Source Voltage V

±30

Parça Durumu

Active

Automotive

No

Typical Turnoff Delay Time Ns

44

Pin Sayısı

3

Ppap

No

Typical Gate Charge10v Nc

29

Category

Power MOSFET

Eccn Us

EAR99

Supplier Package

TO-220AB

Maximum Gate Source Leakage Current Na

100

Channel Type

N

Process Technology

HiperFET

Typical Fall Time Ns

9

Eu Rohs

Compliant

Typical Turnon Delay Time Ns

19

Tab

Tab

Mounting

Through Hole

Typical Rise Time Ns

6

Package Length

10.66(Max)

Package Width

4.83(Max)

Package Height

9.15(Max)

Maximum Operating Temperature C

150

Typical Input Capacitance Vds Pf

1515@25V

Maximum Power Dissipation Mw

330000

Number Of Elements Per Chip

1

Maximum Idss Ua

15

Maximum Drain Source Voltage V

500

Minimum Operating Temperature C

-55

Maximum Gate Threshold Voltage V

5

Pcb Changed

3

Configuration

Single

Channel Mode

Enhancement

Maximum Continuous Drain Current A

16

Maximum Drain Source Resistance Mohm

360@10V

Typical Gate Charge Vgs Nc

29@10V