IXFK80N60P3

Teknik Özellikler

Maximum Gate Source Voltage V

±30

Maximum Continuous Drain Current A

80

Package Width

5.13(Max)

Supplier Package

TO-264AA

Maximum Operating Temperature C

150

Ppap

No

Typical Input Capacitance Vds Pf

13100@25V

Category

Power MOSFET

Mounting

Through Hole

Package Length

19.96(Max)

Channel Type

N

Eccn Us

EAR99

Maximum Drain Source Resistance Mohm

77@10V

Pcb Changed

3

Automotive

No

Package Height

26.16(Max)

Maximum Power Dissipation Mw

1300000

Pin Sayısı

3

Typical Gate Charge Vgs Nc

190@10V

Minimum Operating Temperature C

-55

Process Technology

Polar3 HiperFET

Eu Rohs

Compliant

Maximum Drain Source Voltage V

600

Typical Gate Charge10v Nc

190

Typical Turnoff Delay Time Ns

87

Typical Turnon Delay Time Ns

48

Typical Fall Time Ns

8

Number Of Elements Per Chip

1

Typical Rise Time Ns

25

Channel Mode

Enhancement

Configuration

Single

Tab

Tab

Hts

8541.21.00.95

Parça Durumu

Active