IXFH80N65X2

Teknik Özellikler

Case Connection

DRAIN

Channel Mode

Enhancement

Ds Breakdown Voltagemin

650V

Typical Rise Time Ns

24

Montaj Tipi

Through Hole

Configuration

Single

Typical Gate Charge10v Nc

140

Seri

HiPerFET™

Svhc

Yes

Number Of Elements Per Chip

1

Maximum Drain Source Voltage V

650

Transistor Element Material

SILICON

Minimum Operating Temperature C

-55

Kılıf / Paket

TO-247-3

Drainsource On Resistancemax

0.038Ohm

ECCN Kodu

EAR99

Lead Shape

Through Hole

Pcb Changed

3

Eccn Us

EAR99

Number Of Elements

1

Channel Type

N

Terminal Sayısı

3

Package Height

21.45(Max)

Continuous Drain Current Id

80A

Automotive

No

Nem Hassasiyeti (MSL)

1 (Unlimited)

Gate Charge Qg Max Vgs

143nC @ 10V

Category

Power MOSFET

Drive Voltage Max Rds On Min Rds On

10V

Package Length

16.24(Max)

Fet Type

N-Channel

Operating Mode

ENHANCEMENT MODE

Maximum Operating Temperature C

150

Supplier Package

TO-247AD

Standard Package Name

TO-247

Additional Feature

AVALANCHE RATED

Maximum Gate Source Voltage V

±30

Rds On Max Id Vgs

40m Ω @ 40A, 10V

Current Continuous Drain Id25

80A Tc

Svhc Exceeds Threshold

Yes