IXFH60N65X2-4

Teknik Özellikler

Channel Mode

Enhancement

Automotive

No

Minimum Operating Temperature

- 55 C

Parça Durumu

Active

Svhc Exceeds Threshold

Yes

Seri

650V Ultra Junction X2

Pd Power Dissipation

780 W

Vgs Gatesource Voltage

- 30 V, + 30 V

Number Of Channels

1 Channel

Technology

Si

Svhc

Yes

Rds On Drainsource Resistance

52 mOhms

Vgs Th Gatesource Threshold Voltage

3.5 V

Vds Drainsource Breakdown Voltage

650 V

Eu Rohs

Compliant with Exemption

Ppap

No

Montaj Stili

Through Hole

Transistor Polarity

N-Channel

Kılıf / Paket

TO-247-4

Maks. Çalışma Sıcaklığı

+ 150 C

Qg Gate Charge

108 nC

Id Continuous Drain Current

60 A