IXFH26N50P3

Teknik Özellikler

Channel Type

N

Eccn Us

EAR99

Maximum Drain Source Resistance Mohm

250@10V

Pcb Changed

3

Automotive

No

Package Height

21.45(Max)

Category

Power MOSFET

Mounting

Through Hole

Package Length

16.24(Max)

Supplier Package

TO-247AD

Maximum Operating Temperature C

150

Ppap

No

Typical Input Capacitance Vds Pf

2220@25V

Standard Package Name

TO-247

Maximum Gate Source Leakage Current Na

100

Maximum Gate Source Voltage V

±30

Maximum Continuous Drain Current A

26

Package Width

5.3(Max)

Maximum Gate Threshold Voltage V

5

Typical Rise Time Ns

7

Channel Mode

Enhancement

Hts

8541.29.00.95

Tab

Tab

Configuration

Single

Parça Durumu

Active

Svhc Exceeds Threshold

Yes

Typical Gate Charge10v Nc

42

Typical Turnoff Delay Time Ns

38

Number Of Elements Per Chip

1

Typical Turnon Delay Time Ns

21

Typical Fall Time Ns

5

Svhc

Yes

Minimum Operating Temperature C

-55

Process Technology

HiperFET

Eu Rohs

Compliant with Exemption

Maximum Drain Source Voltage V

500

Maximum Power Dissipation Mw

500000

Maximum Idss Ua

25

Pin Sayısı

3

Lead Shape

Through Hole