IXFH18N65X2

Teknik Özellikler

Channel Mode

Enhancement

Automotive

No

Minimum Operating Temperature

- 55 C

Parça Durumu

Active

Svhc Exceeds Threshold

Yes

Seri

650V Ultra Junction X2

Pd Power Dissipation

290 W

Vgs Gatesource Voltage

- 30 V, + 30 V

Number Of Channels

1 Channel

Technology

Si

Svhc

Yes

Rds On Drainsource Resistance

200 mOhms

Vgs Th Gatesource Threshold Voltage

3 V

Vds Drainsource Breakdown Voltage

650 V

Eu Rohs

Compliant with Exemption

Ppap

No

Montaj Stili

Through Hole

Transistor Polarity

N-Channel

Kılıf / Paket

TO-247-3

Maks. Çalışma Sıcaklığı

+ 150 C

Qg Gate Charge

29 nC

Id Continuous Drain Current

18 A