IXFH16N50P3

Teknik Özellikler

Maximum Gate Source Leakage Current Na

100

Maximum Gate Source Voltage V

±30

Maximum Continuous Drain Current A

16

Package Width

5.3(Max)

Supplier Package

TO-247AD

Maximum Operating Temperature C

150

Ppap

No

Typical Input Capacitance Vds Pf

1515@25V

Category

Power MOSFET

Mounting

Through Hole

Package Length

16.26(Max)

Channel Type

N

Maximum Drain Source Resistance Mohm

360@10V

Pcb Changed

3

Automotive

No

Package Height

21.46(Max)

Maximum Idss Ua

15

Maximum Power Dissipation Mw

330000

Pin Sayısı

3

Typical Gate Charge Vgs Nc

29@10V

Minimum Operating Temperature C

-55

Process Technology

HiperFET

Eu Rohs

Compliant with Exemption

Maximum Drain Source Voltage V

500

Typical Gate Charge10v Nc

29

Typical Turnoff Delay Time Ns

44

Number Of Elements Per Chip

1

Typical Turnon Delay Time Ns

19

Typical Fall Time Ns

9

Svhc

Yes

Maximum Gate Threshold Voltage V

5

Typical Rise Time Ns

6

Channel Mode

Enhancement

Configuration

Single

Tab

Tab

Parça Durumu

Active

Svhc Exceeds Threshold

Yes