IXFB62N80Q3

Teknik Özellikler

Pin Sayısı

3

Typical Gate Charge Vgs Nc

270@10V

Maximum Power Dissipation Mw

1560000

Maximum Idss Ua

50

Minimum Operating Temperature C

-55

Process Technology

HiperFET

Eu Rohs

Compliant with Exemption

Maximum Drain Source Voltage V

800

Number Of Elements Per Chip

1

Typical Turnon Delay Time Ns

54

Typical Fall Time Ns

11

Typical Gate Charge10v Nc

270

Typical Turnoff Delay Time Ns

62

Hts

8541.29.00.95

Tab

Tab

Configuration

Single

Parça Durumu

Active

Maximum Gate Threshold Voltage V

6.5

Typical Rise Time Ns

20

Channel Mode

Enhancement

Maximum Continuous Drain Current A

62

Package Width

5.31(Max)

Maximum Gate Source Leakage Current Na

200

Maximum Gate Source Voltage V

±30

Typical Input Capacitance Vds Pf

13600@25V

Supplier Package

PLUS 264

Maximum Operating Temperature C

150

Ppap

No

Mounting

Through Hole

Package Length

20.29(Max)

Category

Power MOSFET

Automotive

No

Package Height

26.59(Max)

Channel Type

N

Eccn Us

EAR99

Maximum Drain Source Resistance Mohm

140@10V

Pcb Changed

3