IXFA7N80P

Teknik Özellikler

Process Technology

HiperFET

Minimum Operating Temperature C

-55

Maximum Drain Source Voltage V

800

Eu Rohs

Compliant

Maximum Power Dissipation Mw

200000

Pin Sayısı

3

Typical Gate Charge Vgs Nc

32@10V

Channel Mode

Enhancement

Typical Rise Time Ns

32

Tab

Tab

Configuration

Single

Parça Durumu

Active

Typical Gate Charge10v Nc

32

Typical Turnoff Delay Time Ns

55

Number Of Elements Per Chip

1

Typical Turnon Delay Time Ns

28

Typical Fall Time Ns

24

Maximum Operating Temperature C

150

Supplier Package

D2PAK

Ppap

No

Typical Input Capacitance Vds Pf

1800@25V

Maximum Gate Source Voltage V

±30

Maximum Continuous Drain Current A

7

Package Width

9.4(Max)

Channel Type

N

Pcb Changed

2

Maximum Drain Source Resistance Mohm

1440@10V

Package Height

4.7(Max)

Automotive

No

Category

Power MOSFET

Package Length

10.41(Max)

Mounting

Surface Mount