Fiyat için teklif alın
Adet ve teslim süresine göre fiyatlandırılır.
Sevkiyat
Stoktan aynı gün hazırlık
Orijinal ürün
Doğrulanmış tedarik
RoHS
Compliant
Destek
Teknik ekip desteği
Teknik Özellikler
- Channel Mode
- Enhancement
- Maks. Çalışma Sıcaklığı
- + 175 C
- Qg Gate Charge
- 150 nC
- Typical Fall Time Ns
- 18
- Package Length
- 10.41(Max)
- Maximum Drain Source Voltage V
- 150
- Supplier Package
- D2PAK
- Montaj Stili
- SMD/SMT
- Typical Input Capacitance Vds Pf
- 8600@25V
- Number Of Channels
- 1 Channel
- Eccn Us
- EAR99
- Rds On Drainsource Resistance
- 13 mOhms
- Seri
- TrenchT2
- Technology
- Si
- Configuration
- Single
- Category
- Power MOSFET
- Lead Shape
- Gull-wing
- Channel Type
- N
- Maximum Gate Source Voltage V
- ±20
- Automotive
- No
- Process Technology
- HiperFET
- Maximum Continuous Drain Current A
- 110
- Typical Turnoff Delay Time Ns
- 33
- Standard Package Name
- TO-263
- Package Width
- 9.4(Max)
- Number Of Elements Per Chip
- 1
- Minimum Operating Temperature
- - 55 C
- Tab
- Tab
- Maximum Drain Source Resistance Mohm
- 13@10V
- Maximum Operating Temperature C
- 175
- Typical Gate Charge Vgs Nc
- 150@10V
- Parça Durumu
- Active
- Minimum Operating Temperature C
- -55
- Ambalaj
- Tape and Reel
- Vgs Th Gatesource Threshold Voltage
- 2.5 V
- Typical Turnon Delay Time Ns
- 33
- Mounting
- Surface Mount
- Package Height
- 4.83(Max)
- Pin Sayısı
- 3
- Maximum Power Dissipation Mw
- 480000
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