IXDR30N120D1

Teknik Özellikler

Rise Time

70ns

Maximum Operating Temperature C

150

Temel Parça No

IXD*30N120

Reach Svhc

No SVHC

Tab

Tab

Terminal Kaplaması

Tin/Silver/Copper (Sn/Ag/Cu)

Current Collector Pulsed Icm

60A

Turn On Time

170 ns

Power Dissipation

200W

Yayın Yılı

2004

Gate Charge

120nC

Giriş Tipi

Standard

Polarity

NPN

Mounting

Through Hole

Collector Emitter Voltage Vceo

1.2kV

Collectoremitter Saturation Voltage

2.4V

Montaj Tipi

Through Hole

Maximum Gate Emitter Leakage Current Ua

0.5

Parça Durumu

Active

Ambalaj

Tube

Minimum Operating Temperature C

-55

Typical Collector Emitter Saturation Voltage V

2.4

Maximum Gate Emitter Voltage V

±20

Igbt Type

NPT

Collectoremitter Breakdown Voltage

1.2kV

Maximum Continuous Collector Current A

50

Transistor Application

POWER CONTROL

Kılıf / Paket

ISOPLUS247™

Terminal Sayısı

3

Additional Feature

HIGH SPEED SWITCHING, LOW SWITCHING LOSS, FAST RECOVERY

Reverse Recovery Time

40ns

Max Power Dissipation

200W

Package Height

21.34(Max)

Maximum Power Dissipation Mw

200

Pin Sayısı

3

Transistor Element Material

SILICON

Kurşunsuz Kodu

yes

Maximum Collectoremitter Voltage V

1200

ECCN Kodu

EAR99

Element Configuration

Single