IXBP5N160G

Teknik Özellikler

Typical Collector Emitter Saturation Voltage V

4.9

Maximum Operating Temperature C

150

Maximum Gate Emitter Leakage Current Ua

0.5

Collector Emitter Voltage Vceo

1.6kV

Configuration

Single

Gateemitter Thr Voltagemax

5.5V

Power Max

68W

Maximum Gate Emitter Voltage V

±20

Ambalaj

Tube

Package Length

10.66(Max)

Kılıf / Paket

TO-220-3

Qualification Status

Not Qualified

Transistor Application

POWER CONTROL

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Collectoremitter Saturation Voltage

4.9V

Test Conditions

960V, 3A, 47 Ω, 10V

Montaj

Through Hole

Yayın Yılı

2003

Turn On Delay Time

140 ns

Nem Hassasiyeti (MSL)

1 (Unlimited)

Max Collector Current

5.7A

Vceon Max Vge Ic

7.2V @ 15V, 3A

Weight

2.299997g

Number Of Elements

1

Transistor Element Material

SILICON

Fabrika Tedarik Süresi

37 Weeks

Terminal Sayısı

3

Gate Charge

26nC

Pin Sayısı

3

Seri

BIMOSFET™

Turn On Time

340 ns

Supplier Package

TO-220AB

Collectoremitter Breakdown Voltage

1.6kV

Maximum Power Dissipation Mw

68

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Mounting

Through Hole

Parça Durumu

NRND

Montaj Tipi

Through Hole

Package Width

4.82(Max)

Polaritychannel Type

N-CHANNEL