IXBH6N170

Teknik Özellikler

Montaj

Through Hole

Yayın Yılı

2008

Current Collector Pulsed Icm

36A

Svhc

Yes

Transistor Application

POWER CONTROL

Collectoremitter Saturation Voltage

2.3V

Vceon Max Vge Ic

3.4V @ 15V, 6A

Weight

6.500007g

Number Of Elements

1

Transistor Element Material

SILICON

Nem Hassasiyeti (MSL)

1 (Unlimited)

Max Collector Current

12A

Radyasyon Dayanımı

No

Svhc Exceeds Threshold

Yes

Collector Emitter Voltage Vceo

1.7kV

Configuration

Single

Typical Collector Emitter Saturation Voltage V

2.84

Terminal Kaplaması

Tin/Silver/Copper (Sn/Ag/Cu)

Maximum Gate Emitter Leakage Current Ua

0.1

Maximum Operating Temperature C

150

Ambalaj

Tube

Package Length

16.26(Max)

Kılıf / Paket

TO-247-3

Gateemitter Thr Voltagemax

5.5V

Power Max

75W

Additional Feature

LOW CONDUCTION LOSS

Maximum Gate Emitter Voltage V

±20

Çalışma Sıcaklığı

-55°C~150°C TJ

Automotive

No

Package Height

21.46(Max)

Giriş Tipi

Standard

Reverse Recovery Time

1.08 μs

Voltage Collector Emitter Breakdown Max

1700V

Gateemitter Voltagemax

20V

Kurşunsuz Kodu

yes

RoHS Durumu

ROHS3 Compliant

Element Configuration

Single

Maximum Collectoremitter Voltage V

1700

Maximum Continuous Collector Current A

12

Eu Rohs

Compliant with Exemption