DTC023EEBTL

Teknik Özellikler

Output Voltage

80mV

Kılıf / Paket

SC-89, SOT-490

Resistor Emitter Base R2

2.2 kOhms

Voltage Collector Emitter Breakdown Max

50V

Power Max

150mW

Collector Emitter Voltage Vceo

200mV

Terminal Formu

FLAT

Montaj Tipi

Surface Mount

Collectoremitter Breakdown Voltage

50V

Nem Hassasiyeti (MSL)

1 (Unlimited)

Currentcollector Ic Max

100mA

Transition Frequency

250MHz

Max Breakdown Voltage

50V

Max Power Dissipation

150mW

Dc Current Gain Hfe Min Ic Vce

20 @ 20mA, 10V

Transistor Element Material

SILICON

Kurşunsuz

Lead Free

Terminal Pozisyonu

DUAL

Tedarikçi Cihaz Paketi

EMT3F (SOT-416FL)

Ambalaj

Tape & Reel (TR)

Max Collector Current

100mA

Transistor Type

NPN - Pre-Biased

Continuous Collector Current

100mA

Frequency Transition

250MHz

Lead Free Status Rohs Status

Lead free / RoHS Compliant

Number Of Elements

1

Maks. Çalışma Sıcaklığı

150°C

RoHS Durumu

ROHS3 Compliant

Element Configuration

Single

Yayın Yılı

2013

Parça Durumu

Active

Other Names

DTC023EEBTLTR

Vce Saturation Max Ib Ic

200mV @ 1mA, 10mA

Fabrika Tedarik Süresi

13 Weeks

Transistor Application

SWITCHING

Resistor Base R1

2.2 kOhms

Polarity

NPN

Terminal Sayısı

3

Additional Feature

BUILT IN BIAS RESISTANCE RATIO IS 1

Max Frequency

250MHz