VMM300-03F

Teknik Özellikler

Terminal Formu

UNSPECIFIED

Pin Sayısı

7

Temel Parça No

VMM

Vgsth Max Id

4V @ 30mA

Seri

HiPerFET™

Ds Breakdown Voltagemin

300V

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Number Of Elements

2

Max Power Dissipation

1.5kW

Drain To Source Voltage Vdss

300V

Case Connection

ISOLATED

Fabrika Tedarik Süresi

32 Weeks

Çalışma Sıcaklığı

-40°C~150°C TJ

Continuous Drain Current Id

290A

RoHS Durumu

ROHS3 Compliant

Fet Type

2 N-Channel (Dual)

Power Max

1500W

Gate Charge Qg Max Vgs

1440nC @ 10V

Pulsed Drain Currentmax Idm

1160A

Configuration

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Kılıf / Paket

Y3-DCB

Parça Durumu

Active

Nem Hassasiyeti (MSL)

1 (Unlimited)

Transistor Application

SWITCHING

Ambalaj

Bulk

Montaj Tipi

Chassis Mount

Kurşunsuz Kodu

yes

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Transistor Element Material

SILICON

ECCN Kodu

EAR99

Yayın Yılı

2000

Operating Mode

ENHANCEMENT MODE

Input Capacitance Ciss Max Vds

40000pF @ 25V

Rds On Max Id Vgs

8.6m Ω @ 145A, 10V

Terminal Sayısı

7

Terminal Pozisyonu

UPPER

Fet Feature

Standard

Qualification Status

Not Qualified

Montaj

Chassis Mount