VMK90-02T2

Teknik Özellikler

JESD-609 Kodu

e1

Terminal Formu

UNSPECIFIED

Vgsth Max Id

4V @ 3mA

Pin Sayısı

7

Case Connection

ISOLATED

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Power Dissipation

380W

Drain To Source Breakdown Voltage

200V

Number Of Elements

2

Max Power Dissipation

380W

Drain To Source Voltage Vdss

200V

Çalışma Sıcaklığı

-40°C~150°C TJ

Continuous Drain Current Id

83A

Fet Type

2 N-Channel (Dual)

RoHS Durumu

RoHS Compliant

Configuration

COMMON SOURCE, 2 ELEMENTS WITH BUILT-IN DIODE

Pulsed Drain Currentmax Idm

330A

Gate Charge Qg Max Vgs

450nC @ 10V

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Kılıf / Paket

TO-240AA

Pin Sayısı

7

Parça Durumu

Obsolete

Ambalaj

Bulk

Nem Hassasiyeti (MSL)

1 (Unlimited)

Transistor Application

SWITCHING

Montaj Tipi

Chassis Mount

Kurşunsuz Kodu

yes

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Gate To Source Voltage Vgs

20V

Transistor Element Material

SILICON

ECCN Kodu

EAR99

Yayın Yılı

2000

Operating Mode

ENHANCEMENT MODE

Input Capacitance Ciss Max Vds

15000pF @ 25V

Rds On Max Id Vgs

25m Ω @ 500mA, 10V

Terminal Sayısı

7

Terminal Pozisyonu

UPPER

Rise Time

80ns

Direnç

25MOhm

Fet Feature

Standard