VKM60-01P1

Teknik Özellikler

Terminal Sayısı

15

Channel Type

N

Jesd30 Code

R-XUFM-X15

Montaj

Through Hole

Maximum Power Dissipation Mw

300000

Eu Rohs

Supplier Unconfirmed

Typical Turnoff Delay Time Ns

80

Kurşunsuz Kodu

yes

Continuous Drain Current Id

75A

Maximum Continuous Drain Current A

75

Fet Type

4 N-Channel (H-Bridge)

Seri

HiPerFET™

Montaj Tipi

Through Hole

Case Connection

ISOLATED

Rds On Max Id Vgs

25m Ω @ 500mA, 10V

Hts

8541.29.00.95

ECCN Kodu

EAR99

Fabrika Tedarik Süresi

12 Weeks

Yayın Yılı

2005

Typical Gate Charge Vgs Nc

180@10V

Number Of Elements Per Chip

4

Category

Power MOSFET

Eccn Us

EAR99

Operating Mode

ENHANCEMENT MODE

RoHS Durumu

ROHS3 Compliant

Ds Breakdown Voltagemin

100V

Typical Rise Time Ns

60

Transistor Element Material

SILICON

Parça Durumu

Not For New Designs

Nem Hassasiyeti (MSL)

1 (Unlimited)

Gate Charge Qg Max Vgs

260nC @ 10V

Mounting

Screw

Qualification Status

Not Qualified

Maximum Gate Source Voltage V

±20

Ambalaj

Bulk

Maximum Drain Source Resistance Mohm

25@10V

Pcb Changed

13

Çalışma Sıcaklığı

-40°C~150°C TJ

Additional Feature

HIGH RELIABILITY

Number Of Elements

4