MWI25-12A7

Teknik Özellikler

Igbt Type

NPT

Max Power Dissipation

225W

Kılıf / Paket

E2

Max Collector Current

50A

Pin Sayısı

2

Supplier Package

E2-Pack

Turn On Time

170 ns

Additional Feature

UL RECOGNIZED

Typical Collector Emitter Saturation Voltage V

2.2

Pcb Changed

24

Parça Durumu

Active

Input

Standard

Eccn Us

EAR99

Montaj

Chassis Mount, Screw

Input Capacitance Cies Vce

1.65nF @ 25V

Nem Hassasiyeti (MSL)

1 (Unlimited)

Package Width

45

JESD-609 Kodu

e3

Terminal Pozisyonu

UPPER

Maximum Power Dissipation Mw

225

Ntc Thermistor

No

Collector Emitter Voltage Vceo

2.7V

Package Height

17

Terminal Formu

UNSPECIFIED

Maximum Gate Emitter Leakage Current Ua

0.2

Transistor Application

POWER CONTROL

Maximum Gate Emitter Voltage V

±20

Collectoremitter Breakdown Voltage

1.2kV

Maximum Collectoremitter Voltage V

1200

Terminal Sayısı

11

Minimum Operating Temperature C

-40

Transistor Element Material

SILICON

Voltage Collector Emitter Breakdown Max

1200V

Automotive

No

Temel Parça No

MWI

Input Capacitance

1.65nF

Montaj Tipi

Chassis Mount

Pin Sayısı

20

Mounting

Screw

Case Connection

ISOLATED