MIO1200-33E10

Teknik Özellikler

Kurşunsuz

Lead Free

Turn Off Delay Time

1.07 μs

Terminal Pozisyonu

UPPER

Montaj Tipi

Chassis Mount

RoHS Durumu

ROHS3 Compliant

Vceon Max Vge Ic

3.1V @ 15V, 1200A

Kılıf / Paket

E10

Currentcollector Ic Max

1200A

Current Collector Cutoff Max

120mA

Input

Standard

Jesd30 Code

R-XUFM-X9

Parça Durumu

Active

Transistor Element Material

SILICON

Collector Emitter Voltage Vceo

3.1V

Kurşunsuz Kodu

yes

Turn On Time

600 ns

Input Capacitance Cies Vce

187nF @ 25V

Number Of Elements

3

Voltage Collector Emitter Breakdown Max

3300V

Terminal Formu

UNSPECIFIED

Temel Parça No

MIO

Montaj

Chassis Mount

Yayın Yılı

2011

Transistor Application

POWER CONTROL

Turn On Delay Time

400 ns

Case Connection

ISOLATED

Input Capacitance

187nF

Max Collector Current

1.2kA

Gateemitter Voltagemax

20V

Ntc Thermistor

No

Fabrika Tedarik Süresi

25 Weeks

Çalışma Sıcaklığı

-40°C~125°C TJ

Nem Hassasiyeti (MSL)

1 (Unlimited)

Polaritychannel Type

N-CHANNEL

Collectoremitter Breakdown Voltage

3.3kV

Configuration

Single Switch

Igbt Type

NPT

Pin Sayısı

9

Terminal Sayısı

9

Turn Off Timenom Toff

1510 ns