MIEB100W1200TEH

Teknik Özellikler

Vceon Max Vge Ic

2.2V @ 15V, 100A

Turn On Time

175 ns

Collectoremitter Breakdown Voltage

1.2kV

Yayın Yılı

2010

Kılıf / Paket

E3

Montaj

Chassis Mount

Input Capacitance Cies Vce

7.43nF @ 25V

Max Power Dissipation

630W

Transistor Element Material

SILICON

Max Collector Current

183A

Ntc Thermistor

Yes

Input

Standard

Configuration

Three Phase Inverter

Montaj Tipi

Chassis Mount

Parça Durumu

Active

Gateemitter Voltagemax

20V

Case Connection

ISOLATED

Voltage Collector Emitter Breakdown Max

1200V

Collector Emitter Voltage Vceo

2.2V

Terminal Pozisyonu

UPPER

Additional Feature

UL RECOGNIZED

Power Max

630W

Jesd30 Code

R-XUFM-X35

Input Capacitance

7.43nF

Transistor Application

POWER CONTROL

Terminal Formu

UNSPECIFIED

Çalışma Sıcaklığı

-40°C~125°C TJ

Nem Hassasiyeti (MSL)

1 (Unlimited)

Polaritychannel Type

N-CHANNEL

RoHS Durumu

ROHS3 Compliant

Ambalaj

Bulk

Current Collector Cutoff Max

300μA

Terminal Sayısı

35

Turn Off Timenom Toff

700 ns

Number Of Elements

6