IXYN82N120C3H1

Teknik Özellikler

Yayın Yılı

2013

Max Power Dissipation

500W

Max Collector Current

105A

Input Capacitance Cies Vce

4060pF @ 25V

ECCN Kodu

EAR99

Kurşunsuz

Lead Free

Configuration

Single

RoHS Durumu

ROHS3 Compliant

Pin Sayısı

4

Ntc Thermistor

No

Collector Emitter Voltage Vceo

1.2kV

Seri

XPT™, GenX3™

Fabrika Tedarik Süresi

8 Weeks

Genişlik

25.07mm

Power Max

500W

Polaritychannel Type

N-CHANNEL

Transistor Application

POWER CONTROL

Weight

38.000013g

Kılıf / Paket

SOT-227-4, miniBLOC

Nem Hassasiyeti (MSL)

1 (Unlimited)

Uzunluk

38.23mm

Yükseklik

9.6mm

Gateemitter Thr Voltagemax

5V

Turn On Delay Time

29 ns

Terminal Pozisyonu

UPPER

Gateemitter Voltagemax

20V

Terminal Sayısı

4

Voltage Collector Emitter Breakdown Max

1200V

Transistor Element Material

SILICON

Montaj

Chassis Mount, Screw, Surface Mount

Case Connection

ISOLATED

Input

Standard

Input Capacitance

4.06nF

Terminal Formu

UNSPECIFIED

Çalışma Sıcaklığı

-55°C~150°C TJ

Vceon Max Vge Ic

3.2V @ 15V, 82A

Turn Off Timenom Toff

295 ns

Additional Feature

AVALANCHE RATED, UL RECOGNIZED

Parça Durumu

Active

Turn On Time

119 ns