IXTT10P60

Teknik Özellikler

Pin Sayısı

4

Number Of Elements

1

Yayın Yılı

2012

Pin Sayısı

3

RoHS Durumu

ROHS3 Compliant

Jesd30 Code

R-PSSO-G2

Vgs Max

±20V

Çalışma Sıcaklığı

-55°C~150°C TJ

Configuration

SINGLE WITH BUILT-IN DIODE

Case Connection

DRAIN

Terminal Kaplaması

Matte Tin (Sn)

Qualification Status

Not Qualified

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Transistor Application

SWITCHING

Montaj

Surface Mount

Ds Breakdown Voltagemin

600V

Kılıf / Paket

TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

Current Continuous Drain Id25

10A Tc

Power Dissipation Max

300W Tc

JESD-609 Kodu

e3

Kurşunsuz Kodu

yes

Additional Feature

AVALANCHE RATED

Fet Type

P-Channel

Terminal Sayısı

2

Nem Hassasiyeti (MSL)

1 (Unlimited)

Pulsed Drain Currentmax Idm

40A

Drain To Source Voltage Vdss

600V

Vgsth Max Id

5V @ 250μA

Input Capacitance Ciss Max Vds

4700pF @ 25V

Gate Charge Qg Max Vgs

160nC @ 10V

Drainsource On Resistancemax

1Ohm

Fabrika Tedarik Süresi

24 Weeks

Operating Mode

ENHANCEMENT MODE

Ambalaj

Tube

Rds On Max Id Vgs

1 Ω @ 5A, 10V

Montaj Tipi

Surface Mount

Kurşunsuz

Lead Free

Continuous Drain Current Id

10A

REACH Uyumluluk Kodu

not_compliant

Drive Voltage Max Rds On Min Rds On

10V