IXTQ96N15P

Teknik Özellikler

Maximum Drain Source Resistance Mohm

24@10V

Typical Gate Charge Vgs Nc

110@10V

Qualification Status

Not Qualified

Typical Fall Time Ns

18

Case Connection

DRAIN

Maximum Drain Source Voltage V

150

Çalışma Sıcaklığı

-55°C~175°C TJ

Vgs Max

±20V

Current Continuous Drain Id25

96A Tc

Kılıf / Paket

TO-3P-3, SC-65-3

ECCN Kodu

EAR99

Montaj

Through Hole

Number Of Elements Per Chip

1

Typical Gate Charge10v Nc

110

Mounting

Through Hole

Pin Sayısı

3

RoHS Durumu

ROHS3 Compliant

Category

Power MOSFET

Element Configuration

Single

Gate To Source Voltage Vgs

20V

Pin Sayısı

3

Eu Rohs

Compliant with Exemption

Yayın Yılı

2006

Fall Time Typ

18 ns

Rds On Max Id Vgs

24m Ω @ 500mA, 10V

Fabrika Tedarik Süresi

24 Weeks

Operating Mode

ENHANCEMENT MODE

Maximum Operating Temperature C

175

Drainsource On Resistancemax

0.024Ohm

Gate Charge Qg Max Vgs

110nC @ 10V

Drive Voltage Max Rds On Min Rds On

10V

Kurşunsuz

Lead Free

Supplier Package

TO-3P

Additional Feature

AVALANCHE RATED

Standard Package Name

TO-3P

Maximum Power Dissipation Mw

480000

Vgsth Max Id

5V @ 250μA

Channel Mode

Enhancement

Channel Type

N

Seri

PolarHT™