Fiyat için teklif alın
Adet ve teslim süresine göre fiyatlandırılır.
Sevkiyat
Stoktan aynı gün hazırlık
Orijinal ürün
Doğrulanmış tedarik
RoHS
Compliant
Destek
Teknik ekip desteği
Teknik Özellikler
- Automotive
- No
- Fet Type
- N-Channel
- Maximum Continuous Drain Current A
- 82
- JESD-609 Kodu
- e3
- Power Dissipation Max
- 500W Tc
- Kurşunsuz Kodu
- yes
- Minimum Operating Temperature C
- -55
- Pulsed Drain Currentmax Idm
- 200A
- Typical Turnoff Delay Time Ns
- 78
- Montaj Tipi
- Through Hole
- Rise Time
- 20ns
- Ambalaj
- Tube
- Input Capacitance Ciss Max Vds
- 4800pF @ 25V
- Package Length
- 15.8(Max)
- Package Width
- 4.9(Max)
- Parça Durumu
- Active
- Transistor Element Material
- SILICON
- Tepe Reflow Süresi (maks. sn)
- NOT SPECIFIED
- Continuous Drain Current Id
- 82A
- Number Of Elements
- 1
- Ppap
- No
- Lead Shape
- Through Hole
- Avalanche Energy Rating Eas
- 1000 mJ
- Maximum Gate Source Voltage V
- ±20
- Typical Turnon Delay Time Ns
- 29
- Drain To Source Breakdown Voltage
- 250V
- Tab
- Tab
- Turn Off Delay Time
- 78 ns
- Terminal Kaplaması
- Matte Tin (Sn)
- Configuration
- Single
- Pcb Changed
- 3
- Power Dissipation
- 500W
- Typical Rise Time Ns
- 20
- Transistor Application
- SWITCHING
- Tepe Reflow Sıcaklığı (°C)
- NOT SPECIFIED
- Supplier Package
- TO-3P
- Additional Feature
- AVALANCHE RATED
- Maximum Power Dissipation Mw
- 500000
- Standard Package Name
- TO-3P
- Vgsth Max Id
- 5V @ 250μA
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