IXTQ76N25T

Teknik Özellikler

Typical Rise Time Ns

25

Transistor Application

SWITCHING

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Terminal Kaplaması

Pure Tin (Sn)

Configuration

Single

Pcb Changed

3

Power Dissipation

460W

Typical Turnon Delay Time Ns

22

Drain To Source Breakdown Voltage

250V

Tab

Tab

Turn Off Delay Time

56 ns

Number Of Elements

1

Ppap

No

Maximum Gate Source Voltage V

±30

Avalanche Energy Rating Eas

1500 mJ

Package Length

15.8(Max)

Transistor Element Material

SILICON

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Package Width

4.9(Max)

Parça Durumu

Active

Continuous Drain Current Id

76A

Montaj Tipi

Through Hole

Ambalaj

Tube

Rise Time

25ns

Input Capacitance Ciss Max Vds

4500pF @ 25V

Minimum Operating Temperature C

-55

Pulsed Drain Currentmax Idm

170A

Typical Turnoff Delay Time Ns

56

Fet Type

N-Channel

Automotive

No

Maximum Continuous Drain Current A

76

Kurşunsuz Kodu

yes

Power Dissipation Max

460W Tc

Current Continuous Drain Id25

76A Tc

Kılıf / Paket

TO-3P-3, SC-65-3

Montaj

Through Hole

ECCN Kodu

EAR99

Number Of Elements Per Chip

1

Typical Gate Charge10v Nc

92

Maximum Drain Source Resistance Mohm

44@10V