IXTQ64N25P

Teknik Özellikler

Channel Mode

Enhancement

Channel Type

N

Seri

PolarHT™

Nem Hassasiyeti (MSL)

1 (Unlimited)

Vgsth Max Id

5V @ 250μA

Typical Input Capacitance Vds Pf

3450@25V

Terminal Sayısı

3

Supplier Package

TO-3P

Standard Package Name

TO-3P

Maximum Power Dissipation Mw

400000

Additional Feature

AVALANCHE RATED

Drive Voltage Max Rds On Min Rds On

10V

Kurşunsuz

Lead Free

Operating Mode

ENHANCEMENT MODE

Fabrika Tedarik Süresi

24 Weeks

Fall Time Typ

20 ns

Rds On Max Id Vgs

49m Ω @ 500mA, 10V

Gate Charge Qg Max Vgs

105nC @ 10V

Drainsource On Resistancemax

0.049Ohm

Maximum Operating Temperature C

150

RoHS Durumu

ROHS3 Compliant

Category

Power MOSFET

Element Configuration

Single

Eu Rohs

Compliant with Exemption

Yayın Yılı

2006

Pin Sayısı

3

Gate To Source Voltage Vgs

20V

Pin Sayısı

3

Mounting

Through Hole

ECCN Kodu

EAR99

Montaj

Through Hole

Current Continuous Drain Id25

64A Tc

Kılıf / Paket

TO-3P-3, SC-65-3

Typical Gate Charge10v Nc

105

Number Of Elements Per Chip

1

Case Connection

DRAIN

Maximum Drain Source Resistance Mohm

49@10V

Typical Gate Charge Vgs Nc

105@10V

Qualification Status

Not Qualified

Typical Fall Time Ns

20