IXTQ52N30P

Teknik Özellikler

Pin Sayısı

3

Mounting

Through Hole

RoHS Durumu

ROHS3 Compliant

Element Configuration

Single

Category

Power MOSFET

Yayın Yılı

2006

Eu Rohs

Compliant with Exemption

Pin Sayısı

3

Gate To Source Voltage Vgs

20V

Case Connection

DRAIN

Maximum Drain Source Resistance Mohm

73@10V

Typical Gate Charge Vgs Nc

110@10V

Qualification Status

Not Qualified

Typical Fall Time Ns

20

Vgs Max

±20V

Maximum Drain Source Voltage V

300

Çalışma Sıcaklığı

-55°C~150°C TJ

ECCN Kodu

EAR99

Montaj

Through Hole

Current Continuous Drain Id25

52A Tc

Kılıf / Paket

TO-3P-3, SC-65-3

Typical Gate Charge10v Nc

110

Number Of Elements Per Chip

1

Supplier Package

TO-3P

Maximum Gate Threshold Voltage V

5

Maximum Power Dissipation Mw

400000

Standard Package Name

TO-3P

Additional Feature

AVALANCHE RATED

Channel Type

N

Channel Mode

Enhancement

Nem Hassasiyeti (MSL)

1 (Unlimited)

Seri

PolarHT™

Maximum Gate Source Leakage Current Na

100

Vgsth Max Id

5V @ 250μA

Typical Input Capacitance Vds Pf

3490@25V

Terminal Sayısı

3

Fabrika Tedarik Süresi

24 Weeks

Operating Mode

ENHANCEMENT MODE

Fall Time Typ

20 ns

Rds On Max Id Vgs

66m Ω @ 26A, 10V