IXTQ470P2

Teknik Özellikler

Gate Charge Qg Max Vgs

88nC @ 10V

Input Capacitance Ciss Max Vds

5400pF @ 25V

Drainsource On Resistancemax

0.145Ohm

Ambalaj

Tube

Fabrika Tedarik Süresi

24 Weeks

Operating Mode

ENHANCEMENT MODE

Montaj Tipi

Through Hole

Rds On Max Id Vgs

145m Ω @ 500mA, 10V

Continuous Drain Current Id

42A

Drive Voltage Max Rds On Min Rds On

10V

Kurşunsuz

Lead Free

Transistor Element Material

SILICON

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Parça Durumu

Active

Kurşunsuz Kodu

yes

Power Dissipation Max

830W Tc

Additional Feature

AVALANCHE RATED

Fet Type

N-Channel

Terminal Sayısı

3

Pulsed Drain Currentmax Idm

126A

Seri

PolarP2™

Nem Hassasiyeti (MSL)

1 (Unlimited)

Vgsth Max Id

4.5V @ 250μA

Power Dissipation

830W

Vgs Max

±30V

Çalışma Sıcaklığı

-55°C~150°C TJ

Case Connection

DRAIN

Terminal Kaplaması

Pure Tin (Sn)

Qualification Status

Not Qualified

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Montaj

Through Hole

Transistor Application

SWITCHING

Current Continuous Drain Id25

42A Tc

Kılıf / Paket

TO-3P-3, SC-65-3

Avalanche Energy Rating Eas

1300 mJ

Pin Sayısı

3

Number Of Elements

1

Yayın Yılı

2010

Gate To Source Voltage Vgs

30V

Drain To Source Breakdown Voltage

500V