IXTQ36N30P

Teknik Özellikler

Vgs Max

±30V

Power Dissipation

300W

Çalışma Sıcaklığı

-55°C~150°C TJ

Case Connection

DRAIN

Terminal Kaplaması

Matte Tin (Sn)

Qualification Status

Not Qualified

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

ECCN Kodu

EAR99

Montaj

Through Hole

Transistor Application

SWITCHING

Kılıf / Paket

TO-3P-3, SC-65-3

Current Continuous Drain Id25

36A Tc

Avalanche Energy Rating Eas

1000 mJ

Pin Sayısı

3

Number Of Elements

1

Turn Off Delay Time

97 ns

Yayın Yılı

2006

Pin Sayısı

3

Gate To Source Voltage Vgs

30V

Element Configuration

Single

RoHS Durumu

ROHS3 Compliant

Drain To Source Breakdown Voltage

300V

Input Capacitance Ciss Max Vds

2250pF @ 25V

Gate Charge Qg Max Vgs

70nC @ 10V

Drainsource On Resistancemax

0.11Ohm

Fabrika Tedarik Süresi

24 Weeks

Rise Time

30ns

Operating Mode

ENHANCEMENT MODE

Ambalaj

Tube

Rds On Max Id Vgs

110m Ω @ 18A, 10V

Montaj Tipi

Through Hole

Fall Time Typ

28 ns

Kurşunsuz

Lead Free

Continuous Drain Current Id

36A

Drive Voltage Max Rds On Min Rds On

10V

Parça Durumu

Active

Transistor Element Material

SILICON

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Power Dissipation Max

300W Tc

JESD-609 Kodu

e3