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Sevkiyat
Stoktan aynı gün hazırlık
Orijinal ürün
Doğrulanmış tedarik
RoHS
Compliant
Destek
Teknik ekip desteği
Teknik Özellikler
- Power Dissipation
- 400W
- Pcb Changed
- 3
- Configuration
- Single
- Terminal Kaplaması
- Matte Tin (Sn)
- Tepe Reflow Sıcaklığı (°C)
- NOT SPECIFIED
- Transistor Application
- SWITCHING
- Typical Rise Time Ns
- 25
- Voltage Rated Dc
- 500V
- Gatesource Voltage Max
- ±30(V)
- Avalanche Energy Rating Eas
- 1000 mJ
- Maximum Gate Source Voltage V
- ±30
- Operating Temperature Classification
- Military
- Lead Shape
- Through Hole
- Ppap
- No
- Number Of Elements
- 1
- Turn Off Delay Time
- 58 ns
- Tab
- Tab
- Drain To Source Breakdown Voltage
- 500V
- Typical Turnon Delay Time Ns
- 20
- Continuous Drain Current
- 26(A)
- Input Capacitance Ciss Max Vds
- 3600pF @ 25V
- Akım Değeri
- 26A
- Package Type
- TO-3P
- Rise Time
- 25ns
- Ambalaj
- Tube
- Montaj Tipi
- Through Hole
- Eccn Us
- EAR99
- Operating Temp Range
- -55C to 150C
- Continuous Drain Current Id
- 26A
- Parça Durumu
- Active
- Package Width
- 4.9(Max)
- Tepe Reflow Süresi (maks. sn)
- NOT SPECIFIED
- Transistor Element Material
- SILICON
- Package Length
- 15.8(Max)
- JESD-609 Kodu
- e3
- Power Dissipation Max
- 400W Tc
- Kurşunsuz Kodu
- yes
- Maximum Continuous Drain Current A
- 26
- Hts
- 8541.29.00.95
- Automotive
- No
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