Fiyat için teklif alın
Adet ve teslim süresine göre fiyatlandırılır.
Sevkiyat
Stoktan aynı gün hazırlık
Orijinal ürün
Doğrulanmış tedarik
RoHS
Compliant
Destek
Teknik ekip desteği
Teknik Özellikler
- Tepe Reflow Sıcaklığı (°C)
- NOT SPECIFIED
- Transistor Application
- SWITCHING
- Typical Rise Time Ns
- 26
- Power Dissipation
- 250W
- Pcb Changed
- 3
- Configuration
- Single
- Turn Off Delay Time
- 46 ns
- Tab
- Tab
- Drain To Source Breakdown Voltage
- 200V
- Typical Turnon Delay Time Ns
- 20
- Avalanche Energy Rating Eas
- 500 mJ
- Maximum Gate Source Voltage V
- ±30
- Ppap
- No
- Number Of Elements
- 1
- Continuous Drain Current Id
- 48A
- Package Width
- 4.83(Max)
- Parça Durumu
- Active
- Transistor Element Material
- SILICON
- Tepe Reflow Süresi (maks. sn)
- NOT SPECIFIED
- Package Height
- 9.15(Max)
- Jedec95 Code
- TO-220AB
- Package Length
- 10.66(Max)
- Input Capacitance Ciss Max Vds
- 3000pF @ 25V
- Rise Time
- 26ns
- Ambalaj
- Tube
- Montaj Tipi
- Through Hole
- Typical Turnoff Delay Time Ns
- 46
- Pulsed Drain Currentmax Idm
- 130A
- Minimum Operating Temperature C
- -55
- Power Dissipation Max
- 250W Tc
- Kurşunsuz Kodu
- yes
- Maximum Continuous Drain Current A
- 48
- Automotive
- No
- Fet Type
- N-Channel
- Typical Gate Charge10v Nc
- 60
- Number Of Elements Per Chip
- 1
- ECCN Kodu
- EAR99
- Montaj
- Through Hole
- Current Continuous Drain Id25
- 48A Tc
- Kılıf / Paket
- TO-220-3
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