IXTP230N075T2

Teknik Özellikler

Rds On Max Id Vgs

4.2m Ω @ 50A, 10V

Operating Mode

ENHANCEMENT MODE

Fabrika Tedarik Süresi

24 Weeks

Drainsource On Resistancemax

0.0042Ohm

Maximum Operating Temperature C

175

Gate Charge Qg Max Vgs

178nC @ 10V

Terminal Pozisyonu

SINGLE

Drive Voltage Max Rds On Min Rds On

10V

Supplier Package

TO-220

Additional Feature

AVALANCHE RATED

Maximum Power Dissipation Mw

480000

Vgsth Max Id

4V @ 250μA

Channel Mode

Enhancement

Channel Type

N

Seri

TrenchT2™

Nem Hassasiyeti (MSL)

1 (Unlimited)

Terminal Sayısı

3

Typical Input Capacitance Vds Pf

10500@25V

Maximum Drain Source Resistance Mohm

4.2@10V

Typical Gate Charge Vgs Nc

178@10V

Qualification Status

Not Qualified

Typical Fall Time Ns

15

Case Connection

DRAIN

Çalışma Sıcaklığı

-55°C~175°C TJ

Maximum Drain Source Voltage V

75

Vgs Max

±20V

Current Continuous Drain Id25

230A Tc

Kılıf / Paket

TO-220-3

Montaj

Through Hole

ECCN Kodu

EAR99

Number Of Elements Per Chip

1

Typical Gate Charge10v Nc

178

Mounting

Through Hole

Pin Sayısı

3

Jesd30 Code

R-PSFM-T3

RoHS Durumu

ROHS3 Compliant

Category

Power MOSFET

Eu Rohs

Compliant with Exemption

Yayın Yılı

2008

Montaj Tipi

Through Hole