IXTP180N10T

Teknik Özellikler

Drain To Source Breakdown Voltage

100V

Typical Turnon Delay Time Ns

33

Turn Off Delay Time

42 ns

Tab

Tab

Ppap

Unknown

Number Of Elements

1

Avalanche Energy Rating Eas

750 mJ

Maximum Gate Source Voltage V

±20

Transistor Application

SWITCHING

Typical Rise Time Ns

54

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Configuration

Single

Terminal Kaplaması

Matte Tin (Sn)

Power Dissipation

480W

Pcb Changed

3

Pulsed Drain Currentmax Idm

450A

Minimum Operating Temperature C

-55

Typical Turnoff Delay Time Ns

42

Automotive

Unknown

Fet Type

N-Channel

Power Dissipation Max

480W Tc

JESD-609 Kodu

e3

Kurşunsuz Kodu

yes

Maximum Continuous Drain Current A

180

Package Width

4.83(Max)

Parça Durumu

Active

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Transistor Element Material

SILICON

Jedec95 Code

TO-220AB

Package Height

9.15(Max)

Package Length

10.66(Max)

Continuous Drain Current Id

180A

Rise Time

54ns

Ambalaj

Tube

Montaj Tipi

Through Hole

Input Capacitance Ciss Max Vds

6900pF @ 25V

Category

Power MOSFET

Element Configuration

Single

RoHS Durumu

ROHS3 Compliant

Jesd30 Code

R-PSFM-T3