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Sevkiyat
Stoktan aynı gün hazırlık
Orijinal ürün
Doğrulanmış tedarik
RoHS
Compliant
Destek
Teknik ekip desteği
Teknik Özellikler
- Ppap
- No
- Number Of Elements
- 1
- Avalanche Energy Rating Eas
- 3500 mJ
- Maximum Gate Source Voltage V
- ±20
- Drain To Source Breakdown Voltage
- -200V
- Typical Turnon Delay Time Ns
- 32
- Tab
- Tab
- Configuration
- Single
- Terminal Kaplaması
- Tin/Silver/Copper (Sn/Ag/Cu)
- Power Dissipation
- 890W
- Pcb Changed
- 3
- Transistor Application
- SWITCHING
- Typical Rise Time Ns
- 60
- Automotive
- No
- Fet Type
- P-Channel
- JESD-609 Kodu
- e1
- Power Dissipation Max
- 890W Tc
- Kurşunsuz Kodu
- yes
- Maximum Continuous Drain Current A
- 90
- Hts
- 8541.29.00.95
- Pulsed Drain Currentmax Idm
- 270A
- Drain To Source Voltage Vdss
- 200V
- Minimum Operating Temperature C
- -55
- Typical Turnoff Delay Time Ns
- 89
- Ambalaj
- Tube
- Montaj Tipi
- Through Hole
- Input Capacitance Ciss Max Vds
- 12000pF @ 25V
- Package Width
- 5.13(Max)
- Parça Durumu
- Active
- Transistor Element Material
- SILICON
- Package Height
- 26.16(Max)
- Package Length
- 19.96(Max)
- Eccn Us
- EAR99
- Continuous Drain Current Id
- 90A
- Pin Sayısı
- 3
- Mounting
- Through Hole
- Category
- Power MOSFET
- Element Configuration
- Single
- RoHS Durumu
- ROHS3 Compliant
- Jesd30 Code
- R-PSFM-T3
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