IXTK82N25P

Teknik Özellikler

Terminal Sayısı

3

Vgsth Max Id

5V @ 250μA

Seri

PolarHT™

Nem Hassasiyeti (MSL)

1 (Unlimited)

Pulsed Drain Currentmax Idm

200A

Additional Feature

AVALANCHE RATED

JESD-609 Kodu

e1

Power Dissipation Max

500W Tc

Kurşunsuz Kodu

yes

Fet Type

N-Channel

Drive Voltage Max Rds On Min Rds On

10V

Continuous Drain Current Id

82A

Parça Durumu

Active

Transistor Element Material

SILICON

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Drainsource On Resistancemax

0.035Ohm

Input Capacitance Ciss Max Vds

4800pF @ 25V

Gate Charge Qg Max Vgs

142nC @ 10V

Rds On Max Id Vgs

35m Ω @ 41A, 10V

Fall Time Typ

22 ns

Montaj Tipi

Through Hole

Fabrika Tedarik Süresi

28 Weeks

Rise Time

20ns

Operating Mode

ENHANCEMENT MODE

Ambalaj

Tube

Gate To Source Voltage Vgs

20V

Yayın Yılı

2006

Turn Off Delay Time

78 ns

Jesd30 Code

R-PSFM-T3

Element Configuration

Single

Drain To Source Breakdown Voltage

250V

RoHS Durumu

ROHS3 Compliant

Avalanche Energy Rating Eas

1000 mJ

Number Of Elements

1

Pin Sayısı

3

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Current Continuous Drain Id25

82A Tc

Kılıf / Paket

TO-264-3, TO-264AA

Transistor Application

SWITCHING

ECCN Kodu

EAR99